features 1 of 8 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. inp hbt ldmos rf mems sda-5000 gaas distributed amplifier rfmd?s sda-5000 is a directly coupled (dc) gaas microwave monolithic integrated circuit (mmic) distributed dr iver amplifier designed to support a wide array of high frequency commercial, military, and space applications. they are ideal for wideband amplifie r gain blocks, broadband test equip- ment (ate), military, and aerospace applications. 3 2 1 7 6 4 5 vg2 in vti out vto vcas nc ? dc to 35ghz operation ? +17dbm p 3db ? gain=11.8db typical ? noise figure=4db ? output voltage to 8v pp ? 100 ma total current applications ? instrumentation ? military ? aerospace ? broadband ate ds091021 ? die: 2.2mmx1.45mmx0.102mm sda-5000 gaas distrib- uted amplifier parameter specification unit condition min. typ. max. electrical specifications ta=+25c, v dd =+8v dc , vg2@=+1.5v dc , i dd =100ma* operating frequency 0 35 ghz 3db bw gain 10.8 11.8 db 20ghz ip3 25 dbm p out 0dbm, 20ghz p1db 15 dbm 20ghz p 3db 17.5 dbm 20 ghz noise figure at mid-band 4 db 20ghz input return loss 16 db output return loss 15 supply current 100 ma supply voltage 6.5 v dc *adjust vti between -1.5v dc to +0.2v dc to achieve i dd =160ma typical., v g2 =2.75v dc
2 of 8 ds091021 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. sda-5000 typical electrical performance absolute maximum ratings parameter rating unit drain bias voltage (v dd ) +8.0 v dc gate bias voltage (vti) -2 to +0 v dc gate bias voltage (v g2 )(v dd -8.0) v dc to v dd v rf input power (v dd =+8.0v dc )15dbm operating junction temperature (t j )+175 c continuous power dissipation (t=+85c) 750 mw thermal resistance (pad to die bot- tom) 116 c/w storage temperature -40 to +150 c operating temperature -40 to +85 c esd jesd22-a114 human body model (hbm) class 0 (all pads) caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. -45 -40 -35 -30 -25 -20 -15 -10 -5 0 0246810121416182022242628303234363840 s11 (db) frequency (ghz) s11 versus frequency -40c 25c 85c 0 2 4 6 8 10 12 14 16 0246810121416182022242628303234363840 s21 (db) frequency (ghz) s21 versus frequency -40c 25c 85c -80 -70 -60 -50 -40 -30 -20 -10 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 s12 (db) frequency (ghz) s12 versus frequency -40c 25c 85c -40 -35 -30 -25 -20 -15 -10 -5 0 0246810121416182022242628303234363840 s22 db frequency (ghz) s22 versus frequency -40c 25c 85c
3 of 8 ds091021 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. sda-5000 typical electrical performance 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40 p1db (dbm) frequency (ghz) p1db versus frequency 25c -40c 85c 0 5 10 15 20 25 30 02468101214161820 oip3 (db) frequency (ghz) oip3 versus frequency at po=0 dbm/tone (1mhz tone spacing) 25c -40c 85c 0 5 10 15 20 25 0 5 10 15 20 25 30 35 40 p1db (dbm) frequency (ghz) p3db versus frequency 25c -40c 85c 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 nf (db) frequency (ghz) nf versus frequency 25c 85c 0c
4 of 8 ds091021 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. sda-5000 package drawing refer to drawing posted at www.rfmd.com for tolerances. notes: 1. all dimensions in millimeters 2. no connection required for unlabeled bond pads 3. die thickness is 0.102mm (4 mil) 4. typical bond pad is 0.100mm square 5. backside metallization: gold 6. backside metal is ground 7. bond pad metallization: gold
5 of 8 ds091021 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. sda-5000 pin function description interface schematic 1rfin rf input. this pad is dc coupled and matched to 50 ? from dc to 35ghz. 50 ? microstrip transmission line on 0.127mm (5mil) thick alumina thin film sub- strate is recommended for rf input and output. 2vg2 vg2 is an optional pad. it may be used to bias the cascode gate of the amplifier. if this port is used, a 1000pf bypass capa citor with the shortest wirebond length possible is recommended to prevent low frequency gain ripple. 3vto the output drain termination pad. this pad requires a suggested 1000pf bypass capacitor with the shortest wirebond leng th to prevent low frequency gain ripple. the value of the external capacitance limits the low frequency response of the amplifier. 4rfout and vdd rf output. 50 ? microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended for rf input and output. connect the dc bias (v dd ) network to provide drain current (i dd ). 5vcas provides vg2 gate voltage to the cascode amplifier. the value is ~ (v cc /2 - abso- lute value of vti). 6vg21 not connected. 7vti input gate voltage, used to bias the amplifier. the value is between -1.5v dc (device is pinched off) to +0.2v dc (fully on). this pad requires a bypass capaci- tor to ground with the shortest possible wirebond length to prevent low frequency gain ripple. the value of the external capacitance limits the low frequency response of the amplifier. die gnd ground connection. connect die bottom dire ctly to ground plane for best perfor- mance. note: the die should be connected directly to the ground plane with con- ductive epoxy. rfin 1000 pf term resistor 10 pf 1000 pf rfout rfout vdd note: drain bias (vdd) must be applied through a broadband bias tee or external bias network 1000 pf 1000 pf
6 of 8 ds091021 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. sda-5000 assembly diagram application circuit schematic 50-ohm transmission line 1 2 3 1000pf capacitor to gnd 1000pf capacitor to gnd 3mil nominal gap 4 5 1000pf capacitor to gnd 6 7 1000pf capacitor to gnd to vti power supply to vg2 power supply rf & dc bonds 1mil gold wire x=2200 y=1450 1 rfin 2 vg2 1000pf 3 1000pf 4 rfout vdd note note: drain bias (vdd) must be applied through a broadband bias tee or external bias network. 5 1000pf 6 7 1000pf
7 of 8 ds091021 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. sda-5000 measurement technique all specifications and typical performances reported in this document were measured in the following manner. data was taken using a temperature controlled probe station utilizing 150 m pitch gsg probes. the interface between the probes and inte- grated circuit was made with a coplanar to microstrip ceramic te st interface. the test interfac e was then wire bonded to the die as shown in the figure below using 1mil diameter bondwi res. the spacing between the test interface and the die was 200 m, and the bond wire loop height was 100 m. the thickness of the test interface is 125 m (5mil). the calibration of the test fixture included the probes and test interfaces, so that the measurement refe rence plane was at the point of bond wire attachment. therefore, all data represents the in tegrated circuit and accompanying bond wires. ordering information part number description delivery method die/gelpak sda5000 gaas distributed amplifier, 35ghz, 2.2mmx1.45mm die gelpak 10 pcs or more sda5000sb gaas distributed amplifier, 35ghz, 2.2mmx1.45mm die gelpak 2 pcs
8 of 8 ds091021 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. sda-5000
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